Infineon 1200V 50A SiC MOSFET Module Teardown and Cost Analysis

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Infineon DF11MR12W1M1_B11
CoolSiC 1200V 50A MOSFET Module
Power Semiconductor report by Elena Barbarini & Farid Hamrani
March 2018 – version 1

SUMMARY
Overview / Introduction 4
o Executive Summary
o Reverse Costing Methodology
Company Profile 9
o Infineon
Physical Analysis 18
o Synthesis of the Physical Analysis
o Package analysis
 Package opening
 Package Cross-Section
o SiC MOSFET Die
 MOSFET Die View & Dimensions
 MOSFET Die Process
 MOSFET Die Cross-Section
o SiC Diode Die
 Diode Die View & Dimensions
 Diode Die Process
 Diode Die Cross-Section
o Si Diode Die
 Diode Die View & Dimensions
 Diode Die Process
 Diode Die Cross-Section
Manufacturing Process 88
o SiC MOSFET & SiC diode Front-End Process
o SiC MOSFET & SiC diode Fabrication Unit
o Si Diode Die Front-End Process
o Si Diode Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 104
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o MOSFET die
 MOSFET Front-End Cost
 MOSFET Die Probe Test, Thinning & Dicing
 MOSFET Wafer Cost
 MOSFET Die Cost
o SiC Diode die
 Diode Front-End Cost
 Diode Die Probe Test, Thinning & Dicing
 Diode Wafer Cost
 Diode Die Cost
o Si Diode die
 Diode Front-End Cost
 Diode Die Probe Test, Thinning & Dicing
 Diode Wafer Cost
 Diode Die Cost
o Complete Module
 Packaging Cost
 Final Test Cost
 Component Cost
Price Analysis 125
o Estimation of selling price
Comparison 128
o Comparison with Rohm, Cree and ST 1200V SiC MOSFET
Feedbacks 132
Company services 134

Overview / Introduction
o Executive Summary
o Market
o Reverse Costing
Methodology
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Executive Summary
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 - 2020. This
will increase to 40% from 2020 - 2022 due to growth in industrial applications. In total, the SiC market will exceed $1B in 2022.
In the photovoltaic sector, SiC devices have an actual value of $71M, which will increase by around 28% in 2022. The reason for
this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller
packages.
Capitalizing on Infineon’s years of experience and know-how, the CoolSiC™ MOSFET product line enables drastically new
system designs compared to the usual silicon-based converters. Infineon’s new boost converter targets the entire photovoltaic
conversion chain (inverter, battery charging, and energy storage). Based on a 1200V 23mΩ SiC Trench MOSFET, this product’s
best-in-class performance enables highly efficient energy harvesting.
Supported by a full teardown of the module’s components and housing, this report reveals Infineon’s innovative assets, such as
its unique shifted doping implantation design, which brings several advantages to the 1200V SiC MOSFET: superior gate-oxide
reliability, switching performance and conduction losses, the highest transconductance level (gain), a threshold voltage of Vth =
4 V, and short-circuit robustness.
Another of this module’s assets is the use of cutting-edge SiC Schottky Diodes from Infineon’s thinQ!™ product line. This
component is based on an MPS (merged-pin-Schottky) structure that combines the shielding of the electric field from the
Schottky barrier and an increased surge current capability via hole injection.
Thanks to its EasyDUAL™ 1B package design, Infineon’s new device is very cost-competitive. Also, the modules lack base plates,
and the screw clamp provides a new, fast, reliable, low-cost mounting concept for this DBC-based housing.
Based on a teardown of the entire module, this report details the complete bill of materials (BoM), die manufacturing, and
packaging processes. An estimated manufacturing cost and selling price is also included. Moreover, this report proposes a
comparison with competitors’ 1200V SiC MOSFET solutions, and analyses the approach used by Infineon to package its Si IGBT
and SiC MOSFETs vs. the solutions proposed by Rohm for its 1700V SiC MOSFET module.

Chain
o Infineon Profile
o Infineon Product
Physical Analysis
Cost Analysis
Comparison
Feedback
About System Plus
Infineon DF11MR12W1M1_B11 Datasheet

Chain
Physical Analysis
o Synthesis
o Package
o Die design
o Die Cross-Section
Cost Analysis
Comparison
Feedback
About System Plus
DBC Substrate – Physical Analysis

Chain
Physical Analysis
o Synthesis
o Package
o Die design
o Die Cross-Section
Cost Analysis
Comparison
Feedback
About System Plus
Die process

Chain
Physical Analysis
o Synthesis
o Package
o Die design
o Die Cross-Section
Cost Analysis
Comparison
Feedback
About System Plus
Die cross section

Chain
Physical Analysis
o Synthesis
o Package
o Die design
o Die Cross-Section
Cost Analysis
Comparison
Feedback
About System Plus
MPS process
1200 V thinQ!™ SiC Schottky diode generation 5 design. MPS
(merged-pin-Schottky) structure combines the shielding of the
electric field from the Schottky barrier and an increased surge
current capability by hole injection. Dashed lines (left) show
current density at higher currents. Cell design (right) of an
optimized cell structure with hexagonal p+ islands.
MPS Schottky Diode Implantation (Courtesy of Infineon)

Chain
Physical Analysis
o Synthesis
o Package
o Die design
o Die Cross-Section
Cost Analysis
Comparison
Feedback
About System Plus
Die cross section – Back side

Chain
Physical Analysis
o MOSFET Fab Unit
o MOSFET Process Flow
o Packaging Fab Unit
Cost Analysis
Comparison
Feedback
About System Plus
MOSFET Process Flow (2/4)
Implantation
•SiO2 deposition
•Pattern SiO2
•P+ source implantation
Trench
•Trench
Gate oxide
•Thin Gate Oxide growth
and pattern
Drawing not to Scale
0 000
0 000
0 000

Chain
Physical Analysis
o MOSFET Fab Unit
o MOSFET Process Flow
o Packaging Fab Unit
Cost Analysis
Comparison
Feedback
About System Plus
Module Process Flow
Depostion
• Screen Printing of
brazing paste on
the DBC
Test
• Automated Solder
Paste Inspection
Placement
• Components Pick
& Place (dies and
studs)

Chain
Physical Analysis
Cost Analysis
o Synthesis
o Die Cost
o Packaging Cost
o Component Cost
Comparison
Feedback
About System Plus
Main steps of economic analysis

Chain
Physical Analysis
Cost Analysis
o Synthesis
o Die Cost
o Packaging Cost
o Component Cost
Comparison
Feedback
About System Plus
Yields Explanation
The wafers and dies are tested during the process flow. There are 2 types of test :
The tests on the physical characteristics of the wafer like the thickness deposited.
The tests on the electrical functionalities of the die.
The difference is important because with the physical test, a bad result means a problem on a step and all the dies on the
wafer are defective, so the wafer is scrapped. Usually these yields are good for mature technologies.
The tests on the dies are different. Each die is tested, one by one or simultaneously using “parallel” tests, and only the defective
dies are scraped. During the probe test which is realized on the wafer, the defective dies are marked and are not assembled in
package.
Yield Apply on Description
Manufacturing Yield MOSFET+Diode The defective wafers are scraped
Probe yield MOSFET+ Diode
The defective dies are scraped
The number of good dies is function of the probe
yield. Only the good dies are assembled in the
package
Dicing Yield MOSFET+ Diode The defective dies are scraped
Packaging yield MOSFET+ Diode + Package The defective components are scraped
Final test yield MOSFET+ Diode + Package The defective components are scraped

Chain
Physical Analysis
Cost Analysis
o Synthesis
o Die Cost
o Packaging Cost
o Component Cost
Comparison
Feedback
About System Plus
MOSFET Front-End Cost

Chain
Physical Analysis
Cost Analysis
o Synthesis
o Die Cost
o Packaging Cost
o Component Cost
Comparison
Feedback
About System Plus
Housing – Plastic Cover Cost Calculation

Chain
Physical Analysis
Cost Analysis
o Synthesis
o Die Cost
o Packaging Cost
o Component Cost
Comparison
Feedback
About System Plus
Final Module Cost

Chain
Physical Analysis
Cost Analysis
Comparison
Feedback
About System Plus
Estimated Manufacturer Price

Chain
Physical Analysis
Cost Analysis
Comparison
Feedback
About System Plus
o Company services
o Related reports
o Contact
o Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
POWER SEMICONDUCTORS & COMPOUND
• Wolfspeed C2M0025120D SiC MOSFET
• Infineon FF400R07A01E3 Double Side Cooling IGBT Module
• Infineon FS820R08A6P2B HybridPACK Drive IGBT Module
• ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete
• STMicroelectronics 1200V SiC MOSFET STC30N120
• 1200V Si IGBT vs SiC MOSFET Technology and Cost comparison
• ROHM _BSM180D12P3C007_1200V Trench SiC MOSFET
• Wolfspeed C3MTM Platform SiC 900V MOSFET
• Semikron SKiM306GD12E4 1200V 300A IGBT Solderless Module
• CREE CAS300M17BM2 SiC MOSFET
• CREE CAS120M12BM2 1200VSiC Module
• Infineon S100R12PT4 EconoPACK ™4 1200V IGBT4 Module FS100R12PT4
EconoPACK4 IGBT
• Rohm SCH2080KE – SiC power MOSFET with SiC-SBD
Related Reports
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
POWER ELECTRONICS
• Power SiC 2017: Materials, Devices, Modules, and Applications

Chain
Physical Analysis
Cost Analysis
Comparison
Feedback
About System Plus
o Company services
o Related reports
o Contact
o Legal
Business Models Fields of Expertise
Custom Analyses
(>130 analyses per year)
Reports
(>40 reports per year)
Costing Tools
Trainings

Chain
Physical Analysis
Cost Analysis
Comparison
Feedback
About System Plus
o Company services
o Related reports
o Contact
o Legal
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