Cmo Research Paper

Cmo Research Paper
ADVOCACY PAPER
ON
STANDARDIZATION OF CAMOUFLAGE MILITARY UNIFORMS
1. This position paper will advocate for the standardization of camouflage (camo) military uniforms.
It will discuss the recent timeline of changes to service specific uniforms and the costs associated,
potential effects on morale across the services, and the overall positive outcome that standardization
will make when considering Department of Defense (DoD) spending.
2. Standardizing the camo uniform across our military branches is the right decision. There are
currently 10 different camo uniforms in use today with more in development. Since 2002, the four
branches of military have introduced seven different uniforms all containing different patterns and
colors. Prior to 2002, ... Show more content on Helpwriting.net ...
The main objective of camo is survivability and to reduce our military forces detection in combat.
Rep. Bill Enyart stated "If you want to separate yourself, do it in your dress uniform. It doesn't do us
any good to have a battlefield where you have three or four uniforms. The deployed environment is
shifting to a joint service effort. I had the privilege to deploy to a combined engineering directorate
where I worked with the Army, Navy, and Air Force. We all wore the Operational Camouflage
Pattern uniform and it truly felt like we were working as one team for the same mission. With
service identity and morale issues aside, the bottom line is costs savings for development and
production. It is estimated that the Army alone could save about $82 million if other branches would
work together to develop a new camo design. Eliminating multiple uniforms across the service
branches would also allow the military to shift the focus to other priorities rather than spending
precious time and money on unnecessary uniform design.
5. This position paper advocated for the standardization of camo military uniforms. It discussed the
recent timeline of changes to service specific uniforms and the costs associated, potential effects on
morale across the services, and the overall positive outcome that standardization will make when
considering DoD
... Get more on HelpWriting.net ...

Design Of A Low Power Fixed Point 16 Bit Digital
DESIGN OF A LOW–POWER FIXED–POINT 16–BIT DIGITAL
SIGNAL PROCESSOR USING 65NM SOTB PROCESS
ABSTRACT:
Power consumption is the main problem in designing circuits or devices now a day. Since so many
years the researches are going towards the progression of this issue. One of the progressive
technique is SOTB technology. By using this technology, we will design a 16–bit digital signal
processor by using 65nm SOTB CMOS circuit or device. The chip of DSP takes very less power
consumption 282μW at the initialize voltage 0.55V and operation frequency 200MHz. The main aim
of this project is to design a processor such that it requires very less power to operate and also to
dissipate less heat during and after the process so that the performance of the circuit is increased.
SOTB process is type in SOI (silicon on insulator) technology. The silicon–on–thin–buried–oxide
(SOTB) CMOS is a strong candidate for ultralow–power (ULP) electronics because of its less
instability and back–bias control. These advantages of SOTB CMOS enable power and performance
developed with given Vth control at ULV and can achieve ULP operation with acceptably high
speed and low leakage. These characteristics are suitable for such new applications as energy
harvesting sensor network systems, and long lasting wearable computers.
INTRODUCTION: Highly energy efficient CMOS circuits are required in the internet–of–things
(IoT) era since a great number of small electronic apparatuses process and communicate data.

Advantages And Disadvantages Of Near Threshold Voltage...
Near–Threshold Voltage (NTV) Circuits –Design, Future Opportunities and Challenges  Abstract
– Using Moore's law, we will continue to get abundant transistors which only will be limited by the
amount of energy consumed. Energy efficiency can be improved to many orders of magnitude with
the help of Near Threshold Voltage (NTV). There are various Design techniques required for reliable
operation on a wide range of input voltage – from very low to sub threshold region. Coming to the
systems designed for NTVs, they can select their modes of operation dynamically from very high
performances, to high efficient energy modes and also to lowest power. Index Terms– Near
Threshold Voltage (NTV), sub threshold, Design, Reliability, energy, efficiency, and ... Show more
content on Helpwriting.net ...
In case of many core systems where the number of core is large, the cores will exhibit various
frequency of operation due to the variations. By assigning the nearest value of operation to these
cores, and due to the law of large numbers , the overall logic output would not be affected. Figure 2:
Frequency assignment in many–core system Sub threshold Leakage: The sub threshold leakage
power will mainly have two bad effects. (1) disproportionately large leakage in power , and (2)
higher variability in the leakage of power. Active power reduces cubically, but leakage power does
not, and this is the main reason why, larger share of sub threshold leakage power are with NTV
operations except leaving out the disproportionality. Figure 3: Sub threshold leakage power The
total power consumption is very much lower , but there will be substantial leakage power. At low
level logic activity, the active power is low, the leakage power dominates, reducing the NTV
effectiveness for energy efficiency. Thus, in combination with sleep transistors or power gating
chips, fine grain power leakage management will be much more important. SRAM AND
REGISTER

Low-Voltage Current-Tmode Realization of Digital Logic...
Low–Voltage Current–Mode Realization of Digital Logic Gates using CMOS
In this paper a new technique is introduced for implementing the basic logic function by using
analog current–mode techniques. By expanding the logic function in power series expression, and
using adder and sub–tractor realization of the basic logic function is simplified. To illustrate the
proposed technique, a CMOS circuit for simultaneous realization of the logic function NOT, AND,
OR, NAND and XOR is considered. PSPICE simulation results, obtained with ±2V supply, are
included.
Key Word: Current Mirror; CMOS analog multiplier; Current mode; Translinear principle; Digital
logic circuits;
INTRODUCTION
The current–mode implementation of logic gates is a very ... Show more content on Helpwriting.net
...
In an attempt to answer this question, the translinear principle (Gilbert, 1990) has been used to
realize a digital inverter circuit (Kemp, 1983, 1984) a bistable element (Seevinck, 1978) and
NOT/OR/NAND/XOR functions (M., 2003) . All the realizations of logic gates in current mode
reported in references (Kemp, 1983, 1984; Seevinck, 1978; M., 2003) use bipolar technology.
In this paper, we present such an approach, a low–Voltage CMOS analog digital circuit in current–
mode where it works with a supply voltage of VDD=–VSS=2V. The circuit is based on the four–
quadrant CMOS analog multiplier (Ali et al., 2009).
POWER SERIES REPRESENTATION OF LOGIC FUNCTIONS
Using their truth tables, it is easy to show that the input–output relations of the basic digital logic
function can be expressed as (Enab and Zaki, 1993):
Z= 1– Ix (1)
for the NOT operation,
Z= Ix*Iy (2)
for the AND operation,
Z= Ix + Iy – Ix*Iy (3)

for the OR operation,
Z= 1– Ix*Iy (4) for the NAND operation, and
Z= Ix + Iy – 2Ix*Iy (5)
for the XOR operation.
In equations

Cmo Case Study
Millions of leased vehicles are turned in each year, providing used car shoppers with an opportunity
to snag a deal on an off–lease vehicle. In recent years, inventory has crept up as manufacturers use
affordable lease deals to build sales. Fat inventories are worrisome and costly to manufacturers, but
potentially offer sweet deals for consumers provided you know where to look for them. About CPO
Vehicles When customers turn in leased deals, most end up on dealer lots for resale. A much smaller
number may head to auction. So–called off–lease vehicles may look like other used cars and for all
intents and purposes they are. But they also represent inventory manufacturers must move,
otherwise dealer lots fill to overflowing and prices ... Show more content on Helpwriting.net ...
If you visit the manufacturer's website looking for CPO offers, you may find a number of warranty
changes in place, including extending the powertrain warranty. Volvo, for instance, extends its
powertrain warranty to 100,000 miles from 50,000 miles for its CPO fleet. Similarly, Nissan extends
its 60,000–mile powertrain warranty to 100,000 miles. But the warranty enhancements rarely stop
there. Most used car buyers are looking for some type of maintenance coverage going well beyond
the 90–day, 4,000–mile warranty on older used vehicles. For example, Volkswagen extends its
comprehensive warranty by two years or 24,000 miles, whichever comes first. They also kick in
roadside assistance for two years and provide a three–month SiriusXM satellite radio trial
subscription. Mini's CPO deal is also for two years, but for up to 50,000 miles. 2. Financing Deals It
isn't enough for manufacturers to offer warranties, they need to present financing offers to help
move inventory. These change regularly, usually every month, and may cover entire CPO
inventories or select models. For example, Nissan offers 1.95–percent financing for 36 months or
3.95–percent financing for 72 months on CPO inventory. These rates are several points lower than
what most banks and some credit unions offer, and are reserved for customers with top credit. You
should know that if you're not eligible for promotional financing, a loan at a higher rate may still be
available. Brands such as Mercedes–Benz

Advantage And Disadvantage Of Uwb
CHAPTER 1
INTRODUCTION
1.1 Introduction
In the recent pass, both academia and industry field have shown a substantial general interested in
wireless medium communications, Ultra–wideband (UWB) transmission applications [1, 2]. Having
numerous advantages such as high data rate on very low power and short distance range technology
makes UWB as a fascinating technology. Those benefits placed UWB as an interesting technology
for military and medical applications that uses radar and information sensing.
Figure 1.1: Example of direct–conversion transceiver
Figure 1.1 shows the example of direct–conversion transceiver. It is to give brief picture that power
amplifier (PA) is a critical component that is capable to deliver high power for UWB transmitter.
However, the implementation of Radio Frequency (RF) power amplifier is one of the challenging
aspects in emerging ... Show more content on Helpwriting.net ...
In this chapter, the topic included was project overview, problem statements, objectives, project
scope and report outline.
Chapter 2 is covered by literature review. It is an overview about UWB technologies as it stated it's
the benefits of UWB in terms of its characteristics features and applications. This chapter is also
concern about the concepts of CMOS technology. Fundamentals of power amplifier are also
included in Chapter 2 such as the specification of the power amplifier performance, the linear and
switching mode classes, and the its topology,. Not to mention the previous works related to CMOS
power amplifier for UWB applications are at the last part of the chapter.
Chapter 3 covers the design methodology that is proposed for this low band UWB CMOS power
amplifier project. It consists of project design stages, project flow chart process and project planning
timeline on completing this final year project. It also dwells with the proposed power amplifier
design specification and expected outcome for this

Electrical Reflection
H igh–power laser diodes are addressing an increasing number of applications, which demand
higher performance in terms of output power, power conversion efficiency and beam quality, such as
additive manufacturing [1]. High output power from a single emitter can be achieved by
incorporating a large gain medium, which also helps in increasing the catastrophic optical mirror
damage (COMD) threshold. Although, laser diodes are becoming more attractive in direct
applications, nevertheless, they are almost always operated with external feedback. The optics
causing this feedback range from simple optics, for shaping/focusing the output beam, to
sophisticated optics configurations, required for wavelength stabilization [2], and phase locking [3].
... Show more content on Helpwriting.net ...
This is achieved by including spontaneous emission coupling and the spectral dependence of the
gain and refractive index. Speclase also models non–linear effects (e.g. thermal lensing, spatial hole
burning), which are common in high–brightness lasers.
The beam data produced by Speclase, in the form of near–field (NF) and far–field (FF), are
converted into ray data. These ray data are used to configure the laser as a source within Optic
Studio. Speclase propagates the optical fields between the rear and the front facet using 2D WA–
FD–BPM. At the front facet, part of the power within the modes will reflect off the facet, while the
rest will be transmitted through. The spatial superposition of transmitted powers, of all the modes,
forms the near–field of the transmitted beam. The rays are propagated through the optics using
OpticStudio®, taking reflections into account. The rays returning to the laser facet are converted
into optical fields, taking the phases of the rays into account. Then, the proportion coupled to each
vertical mode is determined, using the overlap integral. Finally, the vertical modes, containing the
coherent sum of the power coupled from the external cavity (coherently) and the internally reflected
fields, are propagated by Speclase inside the laser cavity using a Fox–Li approach. This whole
process is repeated until convergence.
II. LASER, PARAMETERS AND EXTERNAL CAVITY SETUP
For this work, we simulated a triple QW 975 nm DBR

Conventional Cmos Technology : Science And Nano Electronics
Conventional CMOS technology comes up with a lot of margins while scaling into a nano–level. So,
to overcome this, several substitute technologies have been proposed as a solution. Quantum Dot
Cellular Automata (QCA) technology is one such upcoming nano–technology that can be a perfect
substitute of Complementary Metal Oxide Semiconductor (CMOS) due to its high speed and low
power procedure in the field of nano–science and nano–electronics. Thus, QCA overcomes the
drawbacks of CMOS technology and has a substantial relevance in the field quantum computation.
In this paper, we give a review result of QCA in terms or hazards using digital multiplexer circuit as
the base. Literary survey lacks in hazard free design. Hazards in a system are undesirable effect
which creates uncertain outputs and can be avoided. This paper considers hazard in smallest ever 2:1
multiplexer. Static hazard has been looked into for both digital and QCA circuit. For both the
circuits, hazard has been eliminated and given a comparative study in terms of delay and better one
has been proposed. Design has been verified using simulation from QCA designer tool.
Keywords–Quantum dot Cellular Automata (QCA); Multiplexer; QCADesigner; Static Hazard;
Delay; Hazard Elimination
I. INTRODUCTION
CMOS technology is very near to its scaling limit. Using the VLSI technology, in the recent past,
researchers are facing some limitations, from practical point of view, in the approaches of CMOS
technology like the short

Implementation Of 8x8 Modified Booth Multiplier With Hpm...
Figure 3.6: Implementation of 8x8 Modified Booth Multiplier with HPM Reduction Method [4]
The Figure.3.6 shows the implementation 8x8 modified booth multiplier using High Performance
Multiplier (HPM) reduction method [4]. The modified booth algorithm is a predominant high
performance multiplier which has low number of partial products row. The generation of these
partial products is quite complex to implement in hardware. So in this work has used a straight
forward way of implementing a Signed and Unsigned Multiplication using Baugh–Wooley
Algorithm with HPM reduction tree method. Baugh–Wooley Multiplier with HPM reduction tree is
discussed in Chapter Six.
CHAPTER FOUR: LOW–POWER DESIGN
4.1 Introduction:
In earlier stages of VLSI circuit design the emphasis is on Area and Speed optimization giving
concerns to Packaging and Efficient designing. As the technology scales down according to
predictions of Moor's Law, it is advent that the CMOS dimensions have been scaled down
drastically. But due to increase in use of Portable Devices Such as Cellphones, Laptops, Personal
Health Monitoring systems, there has been a demand of higher battery life for Portable devices.
Whereas big data centers which contains large set of circuits consumes tremendous power and
dissipates large amount of heat which incurs huge cost to maintain. The solution for these problems
is to design circuits which consume low power which give rise to the concept of Low–Power VLSI
designing.
As this

CMOS Technology Lab Analysis
transistors and thus the circuit area is small. Two stage open loop comparator is presented using
50nm CMOS technology.
 "Design of 3–bit low power flash type ADC" Sarojini Mandal, Dr. J.K. Das [60] ; define that
Simple two stage op–amp with miller capacitance can be used as a high gain comparator. It is
simulated in 180nm technology using Cadance Virtuso analog design environment simulation. The
op–amp uses a 1.8v Vdd and a 1.8v Vss and consumes power of around 0.9mw. The analog output
of each comparator is encoded using cascading full adder designed by transistor logic that makes the
circuit more faster. This paper introduces a low power op–amp modified from the traditional one
and an encoder employing cascaded full adders with pass ... Show more content on Helpwriting.net
...
The TIQ Flash ADC provides higher data sampling rate and operates at low voltage and also low
power consumption.
 "A 8–bit TIQ based 780MSPS CMOS Flash A/D converter" J.Ramesh, K. Gunavathi [24] ;
present the design of an 8–bit Flash ADC with TIQ comparators,. Speed of this ADC is 787.78mbps
and the power consumed is 800mw. In this design the comparators are realized with the inverters,
which avoids the complexity in the design of conventional comparators. The TIQ comparator
consists of two cascaded CMOS inverters. The analog input signal quantization level is set in the
first stage by changing the VTC by means of transistor sizing. The second inverter stage is used for
increased gain and logic level inversion so that the circuit behaves as an internally set comparator
circuit. The key point about second stage is that it must be exactly same as the first stage to maintain
the same DC threshold levels and to keep the linearity in balance for the voltage rising and falling
intervals of high frequency input signals.
 "Employing threshold inverter quantization (TIQ) technique in designing 9–bit folding and
interpolation CMOS analog–to–digital converters (ADC)" Oktay Aytar and Ali Tangel [42] ; This
paper present designing and interpolation of a 9–bit folding and interpolation ADC using 0.35 µm
CMOS C35B4 model under AMS–HIT kit library. The complete system consist of two main blocks,
one of them is 4–bit flash ADC using TIQ technique and second one is the 5–bit

Development Of Domino Cmos Technology For The Design Of...
Abstract–This Paper includes the development of domino CMOS technology for the design of XOR
gate. Low power dissipation is one of the main design considerations for high level performance
circuits. The leakage power dissipation is controlled by the factor gate oxide leakage and threshold
leakage and thus the overall leakage of domino XOR circuits. To show the efficiency of the
proposed model, a simple example like implementing of XOR gate with P type domino XOR, N
type domino XOR gate and PN mixed domino XOR gate, an average power dissipation reduced up
to 66.15% and propagation delay is 46.66% Keywords: –XOR Gate; Leakage Current; Dynamic
power; threshold voltage I. INTRODUCTION Circuit realization for low power and low area has ...
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The third source of power dissipation is leakage power dissipation. In the MOSFET, the leakage
current comprised of six short channel mechanisms. Reverse bias PN junction leakage, sub–
threshold leakage, gate oxide leakage, gate current due to hot carrier injection. Gate includes drain
leakage and channel punch through current. Among these components the two main contributes of
leakage are reversed biased PN junction current and sub threshold current . Dynamic power
P=CLV2DDfc Leakage power Pleakage=VDDllarge Lowering the supply voltage is the most
effective way to achieve low power performance VDD is directly proportional to the leakage power.
If the supply voltage reduced and keeping the constant threshold voltage at its original value results
in drastic degrading in speed because as the supply voltage is reduced the gate drive voltage (VDD–
VT) reduces and thus the delay increases since propagation delay in a CMOS.To overcome the delay
degradation threshold voltage (VT) is to be reduced. Reduction in threshold voltage causes an
exponential increase in sub threshold leakage current. As one continues to scale down supply
voltage and threshold voltage . In this paper, a low leakage domino XOR circuit is proposed.
Proposed circuit employed mixed N and P type

Cmos
CMOS DESIGN AND ANALYSIS OF ULTRA WIDE BAND RECEIVERS
ABSTRACT
Ultrawide band is a unique technology which is used for commercial communications. In this ,I will
explain about UWB and how to integrate it with CMOS technology.This is by designing a UWB
receiver using CMOS technology. Use Verilog to build behavioral model of LNA,mixer,bandpass
filter,integrator.Instante the components in Cadence and run simulation in time domain. In this paper
,I have specified the design considerations of ultra wideband (UWB) receiver architecture. Here, a
more power efficient architecture should undertake part of the signal processing in the analog–
domain. Next, the multiband UWB transceiver is studied and power–efficient circuits is designed for
... Show more content on Helpwriting.net ...
RF SAW pre–filter, which removes out–of–band interferer, and a notch filter centered at 5
GHZ UNII band relaxes receiver dynamic range. Large bandwidth of the UWB signal rces use of
RF front–end with low gain compared to narrow band systems. As a result, baseband channel select
filter must have very small input–referred noise. Furthermore, baseband filter requires high
attenuation and a very accurate and steep roll–off to further limit interfering signal strength, which
limits dynamic range of the subsequent ADC.
Synthesizer implementation must limit spurious tones at the output of the synthesizer, which can
transform interferers into the wanted frequency band. The remainder of this section deals with more
detailed system specifications.
1. Sensitivity, Gain, NF: In MB–OFDM UWB, an UWB receiver operating in the first three bands
(Mode 1 only) needs to have a noise figure (NF) better than 6.6 dB. However, for the UWB device
operating in the first three band groups with nine bands, the required system NF can be 9 db taking
into account the coding gain. A margin of 3 dB is added to set the NF specification for the receiver
as 6 dB. This margin is set after system level simulation taking into account the following combined
non–idealities: 1) 5 degrees in phase and 1 dB in amplitude of
I/Q imbalance; 2) 5 bits of effective ADC quantization; 3) 9 dB of clipping in the signal peak–to–
average ratio (PAR); 4) a

What Is The Electronic Properties Of 2D Tmds
2.3.1 Electronic properties of 2D TMDs
Due to the structurally stable band gap of 2D TMDs, they can be used in the fabrication of
transistors. In 2004, the first transistor made from 2D TMDs (WSe2) was published with a mobility
of less than 500cm2v–1s–1 for p–type conductivity which is about half of that of silicon based
transistors and it had a low on/off ratio which was due to the fabrication of this device on a bulk
material. However, MoS2 is a better option for transistor applications because of its higher on/off
ration exceeding 108 and mobility. Due to the bandgap of TMD monolayers being in the visible
range(400nm–700nm), they have a higher efficiency and are very promising for optoelectronic
applications. MoS2 has been used to ... Show more content on Helpwriting.net ...
Both methods would be reviewed for making 2D TMDs in this paper.
Top–down methods fabrications
Thin flakes of TMDs can be peeled off from bulk materials using adhesive tape, applied to the
substrates and then identified by light interference using similar techniques used to develop
graphene. Fig 6c shows a thin monolayer flake peeled off from the bulk material (Fig 6a)
mechanically with the tape. Oxide nanosheets as well as other materials can be obtained using this
method. Using the mechanical method of exfoliation helps to produce flakes of high purity that can
be used for fabrication of individual devices, however, the size and thickness of the flakes produced
by this method cannot be controlled. In recent research, lasers have been used to control the
thickness of MoS2 flakes by thermal ablation, this method however has a lot of challenges attached
to it.
Another promising method for exfoliation of TMD nanosheets is the liquid–phase preparations. This
allows the creation of hybrid and composites by combining different materials and coatings by spray
coating or doctor blading. In the past, liquid based graphene has been used to make high frequency
electronics and hence solution–based TMDs are expected to have similarly good applications in
flexible electronics and composite materials. TMDs can also be exfoliated using ultra–sonication in
liquids such as organic solvents or solutions of polymer to mention a few. Ultra–sonication results in
exfoliation that

Nano Computer : A Nanotechnology
Nano Computer – A Nanotechnology in Computer Architecture Aayush Gupta Abstract–According
to Moore's Law, the number of transistors per square inch on integrated circuit will double every
year. So far it is possible, but due to difficulties like power consumption its pace get slow down. To
let the Moore's law, we need a new logical step: that is, to use microelectronics in nanotechnology or
Nano Computers. Currently, Nanotechnology is a huge area for study and research. Its wide scope
makes it a good topic for research. It is included in several fields like physics, engineering,
chemistry, biology and computer science. The main moto of this paper is to give brief about Nano
Computer and its architecture. Index Terms – Nano computer, Nano computer Architecture,
Computer Architecture, Nano electronic technology, device scaling. I. INTRODUCTION From a
Long time, scientists are researched to manufacture a smaller, reliable and a faster computer.
Computer architecture growth has been stabilized after 2003 mainly due to the difficulty in power
consumption. The ability to shrink size of transistors will soon be in its limit and so there will be a
need of something which can overcome this problem. Recent growth in the field of Nanotechnology
encourage to use it on Computer electronics. The objective of creating smaller and faster computers
can be achieved by using it. It can help in creating devices used in creating smaller and faster
computers. The third and fourth

Literature Review
UNIT 2
LITERATURE REVIEW
Early Work
Fabrication
2 LITERATURE REVIEW
2.1 Early Work
The influence of strain on the mobility of intrinsic silicon was first observed in 1954 by C.S Smith
[19]. The origin of strained Si film grown on relaxed SiGe can be traced to the 1980s [19]. While
strain effects were not largely exploited, it was in the early 1990s that the strain was once again
revived at Massachusetts Institute of Technology (MIT), USA on process induced and biaxial strain.
In 1992, the first n–channel MOSFET with a strained Si channel exhibiting a 70% higher mobility
was demonstrated [19]. The commercial adoption of strain technology was followed in 90 nm
technology node by all major semiconductor companies like AMD, Integrated ... Show more content
on Helpwriting.net ...
However, as demonstrated by our results, there are undesirable side effects with increasing
equivalent Ge content such as a roll off in Vth, which may affect the device characteristics and
performance significantly.
In year 2007, M. J. Kumar et al[13] have first time examined the impact of various device
parameters like strain (concentration of Ge in SiGe substrate), gate length, S/D junction depths,
substrate (body) doping, strained silicon thin–film thickness and gate work function on the threshold
voltage of strained–Si on Si1–xGexMOSFET. There is a significant drop in threshold voltage with
increasing strain in relaxed Si1–xGex substrate and decreasing channel length. The increase in
mole fraction of Ge, enhances the performance of MOSFETs in terms of transconductance and
speed because of an increase in the carrier mobility. In the Same year V.Venkataraman [22], have
also demonstrated fully depleted strained–Si on SGOI MOSFETs. This article also shows that there
is significant increase in mobility due to strain.
In year 2010, A. Chaudhry have submitted a review of strained silicon technology. The uniaxial and
biaxial structures proposed by both industry and academia via literature and patents have been
reviewed. The main structures under biaxial category are relaxed SiGe, graded SiGe, strained SOI,
SGOI and

What Are The Advantages And Disadvantages Of Double Gate...
5.2 DOUBLE GATE FET : Double–gate CMOS (DGCMOS) offers distinct advantages for scaling
to very short gate lengths. Fabrication of FinFET–DGCMOS is very close to that of conventional
CMOS process, with only minor disruptions, offering the potential for a rapid deployment to
manufacturing. Planar product designs have been converted to FinFET–DGCMOS without
disruption to the physical area, thereby demonstrating its compatibility with today's planar CMOS
design methodology and automation techniques. Double–gate (DG) FETs, in which a second gate is
added opposite the traditional (first) gate, have better control over short–channel effects [SCEs].
SCE limits the minimum channel length at which an FET is electrically well behaved. ... Show more
In shorted–gate (SG) FinFETs, the two gates are connected together, leading to a three–terminal
device. This can serve as a direct replacement for the conventional bulk–CMOS devices. In
independent–gate (IG) FinFETs, the top part of the gate is etched out, giving way to two
independent gates. Because the two independent gates can be controlled separately, IG–mode
FinFETs offer more design options as shown in following figure.
Fig 6.2 : SG–mode FinFET and IG–mode FinFET
6.2 Threshold Voltage Control Through Multiple Supply Voltages for Power–Efficient FinFET
Interconnects :
In modern circuits, interconnect efﬁciency is a central determinant of circuit efficiency. Moreover,
as the technology is scaled down, the importance of efficient interconnect design is increasing.
FinFET interconnect design can provide several new promising interconnect synthesis

Substrate Coupling And Its Impact On Mixed Signal...
Abstract–– In this Paper, issues related to substrate coupling in system on chip design are described
and demonstrated including the physical phenomenon responsible for its creation, coupling
transmission mechanism and media, parameter affecting coupling strengths and its impact on mixed
signal integrated circuits. A test chip to find out various aspect of mixed signal interference is
planned in 0.8µm N well P sub CMOS technology 5V double poly double metal process. Basic aim
of chip is to find out magnitude of interference happening when analog and digital circuit is placed
nearby on a common substrate. An instrumentation amplifier with high CMRR is also designed for
noise sensing. MOSFET capacitors at the input of instrumentation amplifier are used for the picking
of substrate interference. The test chip dimension are 3mm4mm, the periphery is formed by 26
digital input pads with 2 digital supply pads, 20 analog pads and 2 analog supply pads.
Key words– CMOS, Mixed Signal Interference, Substrate Coupling, Guard Banding.
Introduction
The semiconductor industry constantly demanding greater features miniaturization, device density
and lower cost. It has motivated the combination of analog circuit with digital subsystem. Analog
circuits contain extremely sensitive circuits e.g. opamp and comparator which can take a few µvolt
of signal at their input and convert them to several volts at their outputs. Digital circuits on the other
hand operate with rapidly switching waveforms

High Speed And Wide Bandwidth Of Technology
CHAPTER 1
INTRODUCTION
1.1 Introduction
Analog to digital converters (ADCs) is a mixed signal processing device that converts analog signals
which are real world signals to digital signals for processing the information. With the advancement
of technology, digital signal processing has progressed prominently in recent years. The aim of
design is low power, high speed and wide bandwidth analog–to–digital converter has increased
tremendously. Therefore the focus of this thesis is to design low power Flash ADC that operates at
high speed. Integration at very large scale a new architectures, and advances in integrated circuit
(IC) technology have dramatically changed the design of these systems and created new areas of
research and development. By the evolution of technology the transistor size is reduces and the
response of transistor is being faster. The evalution of design is deals with a high speed (above
250MHz) but has low resolution (2 to 8 bits) as with small die area which is called System on a chip
(SoC). In this trend a large number of transistor is integrated on a single chip, it is a challenge for a
developer who designs an analog circuit for high speed applications these are analog to digital and
digital to analog converters (ADCs and DACs) that also maintains other desirable attributes like low
power consumption and small chip area.
The main objective for the consideration a designed ADCs for the complete SoC are high speed and
low power consumption. For a Low

Noise Sensor Essay
Abstract–– In this Paper, issues related to noise sensor application of instrumentation amplifier
through substrate coupling in system on chip design are described and demonstrated including the
physical phenomenon responsible for its creation, coupling transmission mechanism and media,
parameter affecting coupling strengths and its impact on mixed signal integrated circuits. Basic aim
is to find out magnitude of interference happening when analog and digital circuit is placed nearby
on a common substrate. It has been design to have a broad bandwidth (1 KHz to 1MHz) with very
high CMRR to cancel out the unwanted noise at its both inputs and deliver single output. MOSFET
capacitors are used for the picking of substrate interference.
Key words– CMOS, , noise sensor, Substrate Coupling, Guard Banding.
Introduction
The wireless sensor network is applicable in numerous life saving critical field because of low cost
long battery life sensors. A sensor network comprises of sensors and routers to choose the
administrator host that is called the coordinator [2]. A wireless sensor network is easy to use in the
desired environment [6], and the information can be collected then processed and sent to a desired
location. Recent break trough in wireless communication and micro–electro–mechanical systems
(MEMS) [3–5] provides large scale, low power, multi–functional, and low cost network
A wireless sensor network can be composed of a large number of nodes, constituting a

Cmo Geico Auto Insurance Case Summary
Nupur Soni
MIM–Somerville
#898112
Recommendation for a Customer Experience Plan to CMO, Geico Auto Insurance
 What you believe are the key areas of opportunity in your customers' decision journey?
1) Consideration:
Digital and social media channels influence 40 percent of consumer decisions made during the
consideration phase (Source: file:///C:/Downloads/Beyond_price_The_rise_of_customer–
centric_marketing_in_insurance%20(1).pdf ) Potential customers are exposed to ads. Nowadays the
number of brands a consumer thinks in this 1st stage is reduced than what he used to consider few
years back. The reason behind it is media. This is an opportunity for Geico to create brand
awareness and as of now Geico is doing well on all its social media ... Show more content on
Helpwriting.net ...
He will be the internal voice of the customer within a company. Their role aims to keep customer
happiness and loyalty high by making customers' experiences with the company easy and
rewarding. Beyond being "the right thing to do," creating a positive customer experience actually
drives results. In fact, according to Nielsen's April 2012 Global Trust in Advertising report, 92% of
consumers worldwide trust recommendations from friends and family more than any form of
advertising. In a market which is completely driven by social media, the role of a customer
evangelist becomes all the more critical. By having a Customer Evangelist Geico can study the
customer satisfaction

Personal Narrative: Interning At Hudson Partnership CMO
During my time at Hudson Partnership CMO as an intern, I have come to find that a Care Manager's
personality, ability to be nonjudgmental, and their gift to connect with children and families are just
a few aspects that make them great. I have also observed the great results that come from building
supportive child family teams. I have determined that my experience interning at Hudson
Partnership CMO coupled with my educational background and my skills as a health educator
makes me a great fit to pursue a career in the Clinical Mental Health field. I began interning at
Hudson Partnership CMO in January 2016. In a short time, I have been able to learn greatly from
this experience. While shadowing other Care Managers, I have gained knowledge

Low Power Noise Tolerant Latch Design
In this paper an ultra low power and probabilistic based noise tolerant latch is proposed based on
Markov Random Field
(MRF) theory. The absorption laws and H tree logic combination techniques are used to reduce the
circuit complexity of MRF noise tolerant latch. The cross coupled latching mechanism is used at the
output of the MRF latch inorder to preserve the noise tolerant capability of MRF latch. The
proposed latch is faster than the latches presented in the literature and provides low power and high
noise immunity.
Hence we can achieve good trade off in terms of performance, robustness and cost. The latches are
evaluated in 180nm CMOS technology. The results obtained show that the proposed latch consumes
low power and highly noise tolerant.
Finally the proposed latch is applied in transmission gate based full adder circuit. In 180nm
technology the proposed adder can operate reliably with superior noise tolerance and low power
compared to conventional latch based full adder circuit. Keywords–Markov Random Field (MRF)
latch, Markovian Property, C–element, Single Event Upset (SEU), Soft error tolerant, Root Mean
Square (RMS) noise voltage.
1. INTRODUCTION
CMOS technology is approaching the nano–electronics range nowadays, but experiences some
practical limits. High dynamic power dissipation and leakage current in deep submicron
technologies contribute a major proportion of total power dissipation in CMOS circuits designed for

The development of digital integrated circuits is...
The development of digital integrated circuits is challenged by higher power consumption. The
combination of higher clock speed, greater functional integration and smaller process geometries
has marked their contribution to significant growth in power density. Scaling improvises the
transistor in 65nm and below density and functionality on a chip. It helps to increase speed and
frequency operation, hence giving a higher performance. As voltage scales downward with
geometries, threshold voltages must also decrease to gain the performance advantages of the new
technology but leakage technology increases exponentially. Thinner gate oxides have led to an
increase in gate leakage current. Today, leakage power has become an increasingly ... Show more
Also, the dynamic range is degraded by these strict limitations. Upwards, the dynamic range is
lowered due to the reduced signal headroom as a result of reduced supply voltage. Downwards, the
dynamic range is limited by larger noise voltages due to curtailed supply currents. The only way to
make the operational amplifier survive the trend towards lower supply voltages without weakening
its characteristics, is by developing very efficient operational amplifier topologies that combine low
voltage and low power operation and be as simple as possible to save die area, in its contemporary
sense. In this thesis, we design and analyses different design approach of operational amplifier
circuits using power gating technique and MTCMOS leakage reduction techniques. Both these
techniques are very effective for reducing leakage power and group delay, increasing gain margin in
electronic devices. Here, power gating technique is used to reduce leakage power, group delay and
increase gain and phase margin.
We reduce the leakage current in stand mode and ground bounce noise in sleep–to–active mode
transition. In MTCMOS technique, high VTH devices are used on non–critical paths to reduce static
leakage power without incurring delay penalty. If we reduce the leakage current and delay, ground
bounce noise of circuit will increase circuit reliability. On the other hand, when a power gating
technique works in standby mode, the switch transistor is turned OFF, which disconnects the logic

Pros And Cons Of Using CMOS
. EXPERIENCE WITH CMOS IMAGE SENSORS (AFTER THE YEAR 1990)
MOS technology has shown promising results for electrode preparation but has certain limitations of
decrease in threshold voltage due to mismatch in charge components, and thinner gate oxide [114].
CMOS technology has not only reduced these problems but also gained popularity over its counter
parts of microphotodiodes and CCD [17]. Unlike the initial trials of obtaining the phosphenes
stimulation, placement of retinal tissues, use of appropriate biomaterials, electrode impedance
characterization, choice of right patients, researchers had started working in feature enhancement of
retinal implants using the CMOS technology especially after 1997. Table 3 compares the two
popular, ... Show more content on Helpwriting.net ...
Scaling of number of electrodes using digital pads with flexible design had increased the reliability,
testability and safety of the epiretinal implant proposed in [123] with high innocuousness.
The path changing journey of CMOS–APS had started in 2008, when Joachim N. Burghartz et al
[05] implanted the first automated imager chip into patient's eye, following were the major
contributions reported:
Low cost and disposable photodiode made of Thin–Film–on–CMOS (TFC).
High dynamic range (HDR).
Extended range of 120dB utilizing the linear to logarithmic transformation of photocurrent in to
sense signal voltage with compromise on contrast and brightness [124].
Later on counting method to enhance the scalability of the implanted device was the novel technique
suggested in [125], all the desired features like high dynamic range, higher speed, lower cost and
good sensitivity at the cost of complexity was achieved with the time domain counting scheme.
A novel approach of 0.8V 4096 pixel integrated sense and stimulus CMOS image sensor with
balanced current mode stimulator and photon to biphasic current converter was proposed in [126].
The proposed approach utilized the three operating modes i.e. test mode, programming mode and
implant mode for obtaining different results like verification, electrical stimulation and fully
functional chip operation. The authors claimed the higher resolution of 4096 pixel with power

Gifi over Wifi
A Dissertation Report on
Comparative Analysis of Data Transmission Technique with GI–FI over WI–FI
–: Submitted to:–
D.L.PATEL INSTITUTE OF MANAGEMENT & TECHNOLOGY MCA COLLEGE,
Himmatnagar.
In Partial A Fulfillment of the Requirements for the Degree of
MCA 5th SEM in the Post Graduate College at
GUJARAT TECHNOLOGICAL UNIVERSITY
Acknowledgement
We would like to express our deep sense of gratitude towards some important people who have
given their precious time towards the completion of our project.
We are greatly indebted to Mr. Sudhir Patel Sir for his invaluable guidance and support. We express
our thanks for him understanding and considerable attitude towards our
Difficulty. He gave us the detailed information about our topic ... Show more content on
Helpwriting.net ...
Gi–fi.
KEY TERMS
CMOS – complementary metal oxide semiconductor
MOSFETs – metal oxide semiconductor field effect transistors
TTL – transistor–transistor logic
DSPS – digital signal processors
HMDS – hexamethyldisilazane
SiO2 – silicon dioxide
UWB– Ultra–Wideband
PAN–personal–area network
CSP–Communications Service Provider
1. INTRODUCTION
With its bright yellow–and–red signs, Gifi is hard to miss. Founded in 1981, the French budget
retailer markets itself as a one–stop discount store, with 300–plus locations in France as well as

shops in Africa, Belgium, French Guiana, Italy, and Spain. Founder, chairman and CEO Philippe
Ginestet and his family control Gifi. Wi–Fi (ieee–802.11b) and Wi–Max (ieee–802.16e) have
captured our attention. As there is no recent developments which transfer data at faster rate. As
video informationtransfer taking lot of time. This leads to introduction of Gi–Fi technology .it offers
some advantages overWi–Fi, a similar wireless technology, in that it offers faster information rate in
Gbps, lesspower consumption and low cost for short range transmissions. Gi–Fi which is developed
on a integrated wireless transceiver chip. In which a small antenna used and both transmitter–
receiver integrated on a single chip. Which is fabricated using the

What Are Digital Circuits?
What are digital circuits? Those circuits wherever the signal should be one in every of 2 distinct
levels is referred to as digital circuit. Every level is taken into account jointly of 2 completely
different states. Example– on/off, 0/1, true/false etc. In comparison to analog circuits, digital circuits
are less susceptible to noise or degradation in quality, additionally the errors are detected and
corrected simply with the assistance of digital signals. EDA– ELECTRONIC style AUTOMATION
tools (a style of package that improves or enhance the logic in digital circuit) is employed by the
engineer to automatize the method of coming up with such circuits. ADVANTAGES Some of the
essential benefits of digital signals are– 1) they 're less costly 2) a lot are reliable than analog
circuits. 3)they 're straightforward to govern 4) a lot versatile 5) higher Compatibility with
alternative digital systems 6) solely digitised data is transported through a loud channel without any
of the degradation 7) integrated networks. DISADVANTAGES– Some of the Disadvantages of
digital circuit are– they use a lot of energy than the alternative style of circuits to perform same style
of calculations and signal processes tasks, ultimately resulting in the production of heat. This can be
a major limiting factor in portable or battery powered systems. OTHER MAJOR DRAWBACKS
ARE– THE universe or real world is principally ANALOG–signals in this world like light,
temperature, sound, electrical

The Active Pixel Sensor Of Digital Cameras
Photodiode Active Pixel Sensor in Digital Cameras
Basic Working and Modes of Operation
Aronee Dasgupta
Telecommunication Department
RV College of Engineering
Bangalore, India aronee2008@live.com Bharghav Ram
Telecommunication Department
RV College of Engineering
Bangalore, India bhargavrammv@yahoo.co.in Abstract–Digital cameras have become extremely
common as the prices have reduced. One of the drivers behind the falling prices has been the
introduction of CMOS image sensors. Integrating a CCD sensor is very difficult with existing
CMOS technology while a CMOS sensor. On the other hand CMOS sensors can be very
conveniently integrated with the silicon substrate. The main objective of this essay is to provide
information about active pixel sensors.
Introduction
The market for image sensors are showing an enormous increase in sales and developments of
digital cameras and mobile phone cameras. Imaging sensors are mainly of two types:
complementary metal oxide semiconductor (CMOS) image sensors and charge couple device (CCD)
sensors. Active pixel sensors (APS) are the emerging sensors for the replacement of existing and
widely used charged couple device (CCD) sensors. There is a constant drive in researchers to
develop APS sensors which have more sensitivity have lower marginal noise faster operation and
can capture greater detail. The reason for using an active pixel sensor and not a passive pixel sensor
is that passive pixel sensors are very noisy as there are no

CMOS Essay / 1
CMOS The CMOS (complementary metal–oxide–semiconductor) is the word which is normally
used to describe the small amounts of the memory which is on the computers motherboard and it
stores the BIOS settings. Also some of the BIOS settings include the systems time and date as well
as hardware settings.
Back Panel Port Used for/ Description Image
PS/2 The PS/2 port is a 6–pin mini–DIN connector that is used for connecting some keyboards and
mice to the computer system.
USB A USB (universal serial bus) is a mini storage device that is portable and you can store your
data on it and use it when it is connected to a computer/laptop.
Ethernet An Ethernet is a wire that connects numbers of computers to a network area and it avoids ...
Show more content on Helpwriting.net ...
Also the DDR uses the falling and the rising edges of the clock signal.
Hard Drive A hard drive is a data storage device that uses magnetic storage to store and retrieve data
when connected.
PATA/IDE/Master/ PATA (parallel advanced technology attachment) is a standard interface for the
connection of storage devices.
SATA Hard Drive SATA (serial advanced technology attachment) is an interface that is used to
connect ATA hard drives to the motherboard of the computer. Also they use small and thin cables,
which means there is better airflow in the computer.
CD–ROM (capacity) CD–ROM (compact disc–read only memory) is an optical disc that contains
audio or software data and they are read only. A CD–ROM usually stores 650MB of data.
DVD–ROM (capacity) DVD–ROM (digital versatile disc–read only memory) is read only and they
are mostly used for storing large amounts of software applications.
Blu–Ray (capacity) A Blu–ray is an optical disc that is designed to display HD videos and store
large amounts of data.
Graphics Card A graphics card is a card that connects to the motherboard of a computer system and
it outputs images. A graphics card is also known as a video card.
VGA VGA (video graphics array) is a cable that is used to connect an analog PC monitor to a
PC/laptop.
DVI A DVI (digital visual interface) is a cable that is used to connect a video source. For example
computer monitor or a video display controller to a display device.
HDMI HDMI (high

Use Of Vmos And The Variation Of Channel Parameters
Abstract:
The object of our topic is the extended studies of I~V characteristics of VMOS with the variation of
channel parameters. VMOS transistor is a type of metal oxide semiconductor transistor. VMOS is
also used for describing the V–groove shape vertically cut into the sub–strate– material. VMOS,
abbreviation for VMOS is vertical metal oxide semiconductor". In a VMOS current flows from
vertically upwards from drain to source. It can be mostly use in power amplification and audio
switching, positive temperature coefficient and we can easily operate. It has emerged as the
solutions of changing the shape of channel to give the voltage more quickly than the other transistor.
We will show how we can make it more efficient and significant by changing drain to source
channel shape. We want to extend the idea of VMOS I~V characteristics using other group (iii–iv)
materials instead of SiO2, Si and P or changing the structure of gate, source and drain. As it is a bit
costly we will try to make it cost effective and reduce the leakage current.
Work Plan:
To study the I–V characteristics we are using the software silvaco as our tool. First we design a
traditional mosfet using silvaco. Then our goal is to change the channel parameter into V–groove
shape so that the channel area is increased. Also to reduce the size of device in manufacture. Also to
move the drain at the bottom of the structure while the source is at the top. It has advantage as there
are two connection for source

Essay On Adaptive Filters
Adaptive filters have been successfully applied to diverse fields including communications, speech
recognition, control systems, radar, seismology and biomedical engineering. Among various types of
adaptive algorithms, the least–mean–square (LMS) algorithm is well known and widely adopted due
to its simplicity and robustness to initial condition and noise. The performance of the LMS
algorithm, in terms of convergence rate, maladjustment, mean–square error (MSE), and
computational cost, is governed by the step– size. The frequency–domain (FD) adaptive filter
algorithm is known to be able to reduce the numerical complexity by using the overlap–and–save
implementation method. It incorporates block updating strategies where the fast Fourier ... Show
more content on Helpwriting.net ...
A variable step–size algorithm is proposed in,by focusing on achieving low residual error
specifically for the acoustic echo cancellation applications and also lacks of convergence analysis.
Thus, we are motivated to develop an FD step–size control for LMS algorithm. Our objective is to
achieve both fast convergence and low steady–state error, and to provide theoretical analysis on the
convergence. A new bin–wise block–varying step size for the FD LMS algorithm. The optimal
solution of step size at each iteration is derived by cancelling the a posteriori error in each frequency
bin, and its estimate is connected to the magnitude–squared coherence (MSC) function. This
Performs better than the existing FD algorithm in terms of both convergence rate and mean square
deviation (MSD). Furthermore, compared to the TD algorithm, the proposed method converges
faster in the presence highly of correlated filter input. 5.1.1 frequency–Domain Variable Step–Size
LMS The derivation of the proposed FD step size control algorithm,

A Novel Design Of A Double Tail Comparator
A Novel Design of a Double Tail Comparator
1Pedapudi Satish Babu,2N.V.Lalitha
1M.tech student, india, p.satish605@gmail.com.
Assistant proferssor,india,lalitha.nv@gmail.com.
Abstract: A new CMOS clocked dynamic comparator using two input single output differential
amplifier as latch stage suitable for high speed analog to digital converters with the performance of
high speed, low power dissipation and low immune to noise. The conventional dynamic comparator
requires more power and has more delay. A conventional double tail dynamic comparator consumes
less power and works at high speed than its predecessor, the conventional comparator. There is very
much need to reduce the delay and power consumption which is possible by strengthening the
positive feedback during the regeneration. This can be achieved by adding few transistors to the
double tail dynamic comparator. Using the inverter based differential amplifier to design a novel
double tail comparator for reducing the no of transistors and better characteristics. The performance
of this method is to be analyzed with the existing two designs at different power voltages and
frequencies using 0.18μm CMOS Technology. Key words: Double–tail comparator, dynamic
clocked comparator, high–speed analog–to–digital converters (ADCs), low–power analog design,
inverter op–amp
1. INTRODUCTION
Comparators also known as single bit analog–to–digital converter that are mostly used in abundance
A/D converter. A

Nt1310 Unit 3 Research Paper Cmos
Nowadays, Silicon CMOS is the ultimate winner for the high–speed and/or low power computations
and logic race. It is the pillar of the semiconductor industry and the main driver for device scaling.
The lithographic process advancement and the integration of new materials (like, SiGe and HfO) [2]
with the conventional CMOS had helped in overcoming the key challenge of preserving the low
power and high performance which was very hard to maintain due to aggressive scaling [3]–[9].
Nowadays, the major limitations on computation performance are memory access latencies and
power consumption. Due to memory access latency, for instance, the recently achieved CPU clock
frequency of 5.7 GHz must be constraint to the maximum access speed of off–chip ... Show more
If large amounts of high–speed non–volatile memory could be integrated onto the CPU (Figure 1 2),
the need for a hard drive (storage) and a motherboard could also be eliminated. This computer–on–
chip concept can deliver > 1000x improvement in computation speed using a fraction of the power
compared to the conventional computers.
The ability of performing logic operation and signal multiplexing in the memory layer will
drastically improve the overall system performance, and will also allow better utilization of the
underneath CMOS layer (Figure 1 2).
Emerging nonvolatile memory technologies such as magnetic random access memory (MRAM) and
phase change memory (PCM) can be integrated on the top of conventional 2D CMOS at the back–
end–of–the–line using low–temperature processing [17], [18]. Hence, these technologies provide
high–density nonvolatile storage with very fast access speeds and high bandwidths, which is a key
solution to the Von–Neumann bottleneck. Figure 1 2 Illustration of PCM cross–bar array integrated
on the top of the CPU without (left) and with (right) PCM logic devices showing the area relief on
the underneath

A High-Voltage Compliant Microelectrode Array Driver for...
2.5
High–voltage switching
A fundamental component of this microelectrode driver is a high–voltage switch and it is necessary
to characterize the implemented switch for different stimulation current levels. An analog CMOS
switch can be an n–type or p–type MOSFET which is operated either in cut–off (OFF state) or
ohmic region
(ON state). The switch can be characterized by a fixed linear transconductance, gds , which is
strongly signal–dependent and expressed according to Eq. 8 [37] where, μn and μp are electron and
hole mobility respectively in two types of transistors, Cox is the gate–oxide capacitance, W n and W
p are the dimensions of transistors, VDD is the power supply
L
L voltage, and Vin is the input signal. The bulk of NMOS and PMOS transistors are connected to the
highest potential, VDD and the lowest potential, VSS respectively. The limitations are that the
maximum voltage an NMOS and the minimum voltage a PMOS can pass are [VDD − Vthn ] and
|Vthp | respectively.
This drawback can be overcome using CMOS transmission gate (TG) which exhibits lower overall
transconductance. Another advantage of using TG based switch is that it passes good '1' (or logic
level high) and good '0' (logic level low) without any threshold voltage drop, or in other words, TG
gate switch allows rail–to–rail swings. The transconductance of TG gate switch is expressed by the
following equation: The on resistance RsON of the switch is the reciprocal of its transconductance,
gdsON and given by

A Novel Design Of A Double Tail Comparator
A Novel Design of a Double Tail Comparator
.
P. satish babu/M.Tech student
Department of ECE
VLSI&ES
Machilipatnam, India
p.satish605@gmail.com
Abstract :A new CMOS clocked dynamic comparator using two input single output differential
amplifier as latch stage suitable for high speed analog to digital converters with the performance of
high speed, low power dissipation and low immune to noise. The conventional dynamic comparator
requires more power and has more delay. A conventional double tail dynamic comparator consumes
less power and works at high speed than its predecessor, the conventional comparator. There is very
much need to reduce the delay and power consumption which is possible by strengthening the
positive feedback during the regeneration. This can be achieved by adding few transistors to the
double tail dynamic comparator. Using the inverter based differential amplifier to design a novel
double tail comparator for reducing the no of transistors and better characteristics. The performance
of this method is to be analyzed with the existing two designs at different power voltages and
frequencies using 0.18μm CMOS Technology.
Key words: Double–tail comparator, dynamic clocked comparator, high–speed analog–to–digital
converters (ADCs), low–power analog design, inverter op–amp.
1. INTRODUCTION Comparators also known as single bit analog–to–digital converter that are
mostly used in abundance A/D converter. A CMOS dynamic latched dynamic comparators are
provide low

The Basics Of Synchronous And Asynchronous Circuits
ABSTRACT The aim of the presented report is to understand the basics of synchronous and
asynchronous circuits. The term paper is about synchronous and asynchronous circuits and their
differences. The advantages and disadvantages of both synchronous and asynchronous circuits are
discussed further. Digital circuits and sequential circuits are also described in brief at the beginning
of the report. The clock gating, self–clock gating and clock signals are explained. Further, the
sequential machines moore and mealy are discussed along with their differences and variations. In
the end, the differences between the two types of circuits are highlighted. Also, the term paper is
summed with a conclusion in the end. What are digital circuits? Those circuits wherever the signal
should be one in every of 2 distinct levels is referred to as digital circuit. Every level is taken into
account jointly of 2 completely different states. Example– on/off, 0/1, true/false etc. In comparison
to analog circuits, digital circuits are less susceptible to noise or degradation in quality, additionally
the errors are detected and corrected simply with the assistance of digital signals. EDA–
ELECTRONIC style AUTOMATION tools (a style of package that improves or enhance the logic in
digital circuit) is employed by the engineer to automatize the method of coming up with such
circuits. ADVANTAGES Some of the essential benefits of

How Technology Has Changed Real Time Digital Operations

Abstract– VLSI technology has been the cornerstone of every technological achievement in the past
century, but as Gordon
Moore predicted it is nearing its saturation. A lot of other technologies have been researched upon to
fulfill the needs of the fast paced world; one of the potential replacements is Quantum
Dots Cellular Automata technology which uses Nano–sized particles to realize real time digital
operations. The advantage of
QCA technology over its VLSI counterpart is a set of characteristics like drastic decrease in area
consumed, less power consumption, reduced time taken for execution and higher overall efficiency.
In this paper we discuss one of the many fundamental blocks of the digital technology that is a
simple
Serial register (SISO, SIPO). It finds its applications in every field be it medical where timer based
equipment's are used to monitor health or any day to day activity in which a memory unit is used.
Index Terms–Serial register, QCA technology, Quantum dot,
VLSI Technology.
I. INTRODUCTION
NE of the most promising nanotechnologies in the present day scenario in a pool of various
technologies in the research phase is Quantum–Dot Cellular Automata (QCA) which is able to
replace the CMOS technology. As we see in the current scenario there is rapid scaling of CMOS
technology to accommodate millions, now probably billions of transistors in a specified area as
efficiently as possible. As predicted by Gordon Moore, in the next few years CMOS is set to hit a

How Technology Has Broadened The Spectrum Of Applications
4. EMERGING DEVICES
The continuous scaling of CMOS technology has broadened the spectrum of applications. Complex
architectures can be now realized on a single chip. The integration of existing and new technologies
with CMOS extends the scope of implementation.
Figure 3 : Relationship among More Moore, More–than–Moore, and Beyond CMOS
4.1 More than Moore
The functional diversification of the semiconductor based devices by non–digital components is
More than Moore implementation. These non–digital functionalities may not scale at the same rate
as the digital components. The non–digital components are capable of interacting with outside world
through sensors and actuators. This integration of functions like analog and mixed signal processing,
addition of passive, power components and bio chips increases the range of applications such as
communications, automotive, biomedical and security. As integration grows so does the challenges,
it demands the need for multidisciplinary research programs to run in pace with growing scientific
fields.
4.2 More Moore
The expansion of the CMOS by conventional dimensional scaling to reduce the cost per function
and improved performance is More Moore. This also comes with resource scarcity such as power
availability and reduced flexibility in interconnects. Power dissipation becomes a critical problem in
such devices due to large logic circuits. Since the battery capacity has not improved much but the
amount of logic in SoC almost doubles

Collateralized Mortgage Obligation (CMO)
Collateralized Mortgage Obligation also known as CMO is a structure that is based on risk. The first
CMO was in 1983 for Freddie Mac was by Salomon Brothers and First Boston (banks). According
to the Investopedia, "A collateralized mortgage obligation is a special purpose entity that receives
the mortgage repayments and owns the mortgages it receives cash flows from (called a pool). The
mortgages serve as collateral, and are organized into classes based on their risk profile. Income
received from the mortgages is passed to investors based on a predetermined set of rules, and
investors receive money based on the specific slice of mortgages invested in (called a tranche)."
Tranches are created when mortgage loans from an institution such as

The Low Power Optimization Techniques
Introduction The low power optimization techniques are very crucial for next generation wireless
communication and battery powered signal processing applications. Several low power optimization
techniques at circuit level and device level were implemented in past two decades to achieve low
power Very Large Scale Integration (VLSI) designs. However the continuously growing low power
demand motivates researchers to evolve even low power designs. The architecture level low power
optimization is possible for signal processing and the communication applications considering the
dynamically fluctuating signal value. 1.1 Static Vs Dynamic Power The amount of energy consumed
per operation and the heat dissipated by the circuit are determined by the power consumption of a
design. A great number of critical design decisions, like the battery lifetime, supply–line sizing,
power supply capacity, packing and cooling requirements are being influenced by the above factors.
Power dissipation is an important property of a design that affects feasibility, cost, and reliability.
However, the number of circuits that can be integrated onto a single chip, and how fast they are
allowed to switch are determined by their high–performance computing, power consumption limits
and the heat removal system (Jan M. Rabaey). In present era of increasing mobile computing
applications, for the amount of energy stored in battery, the achievable number of computations
directly depend on power consumption of

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