Global GaN Industrial Devices Market is anticipated to grow from US$481.8 mn in 2014 to US$1,315 mn by 2021 rising at a 15.10% CAGR from 2015 to 2021; Blossoming economy in developing countries drives GaN industrial devices market

1. Global GaN Industrial Devices Market is anticipated to grow from US$481.8 mn in 2014 to
US$1,315 mn by 2021 rising at a 15.10% CAGR from 2015 to 2021; Blossoming economy in
developing countries drives GaN industrial devices market
GaN Industrial Devices Market : Industry Analysis, Opportunity
Assessment and Forecast upto 2021
Blossoming economy in developing countries and the development of next-gen hybrid electric
vehicles and electric vehicles hold immense opportunities for the development of the GaN
industrial devices market. However, high cost of pure gallium nitride is anticipated to restrict its
growth in the coming years.
Based on type, the GaN industrial devices market is bifurcated into opto electronics and power
devices. Opto electronics comprises laser diodes and light-emitting diodes and this segment held
a 78.0% share in the overall market in 2014. Power devices are further broken down into metal
oxide semiconductor field effect transistor (MOSFETs), Schottky diode, high electron mobility
transistors (HEMTs), and others.
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The key applications of GaN HEMTs are wireless phone infrastructure: base stations, V-SAT,
defense, WiMAX/LTE, CATV, satellite, and others. Fueled by the increasing number of base
transceiver station installations, base stations held the largest share of 26.0% in the overall
market in 2014.
Based on application, the GaN industrial devices market is segmented into radiofrequency (RF),
power device, and light-emitting diodes (LED). Driven by large-scale usage of GaN industrial
devices in traffic signal lamps, vehicle lamps, and liquid crystal lamps, LED emerged as the
leader in terms of both value and volume. The LED segment accounted for 68.0% of the market
in terms of value and 82.50% in terms of volume in 2014.
This 155 page report gives readers a comprehensive overview of the GaN Industrial Devices
Market. Browse through Table. Browse through 61 figures and 08 data tables to unlock the
hidden opportunities in this market.

2. Based on geography, the global GaN industrial devices market is divided into five key regions:
Europe, Asia Pacific, North America, Latin America, and the Middle East and Africa. Accounting
for a share of 31.10% in the overall GaN industrial devices market in 2014, North America
emerged as the leader driven by high penetration of GaN-based transistors in military and
defense applications and the growing demand for LEDs in computers, tablets, laptops, gaming
devices, and televisions. Europe was a close second with a market share of 28.90% in 2014.
The most prominent players operating in the global GaN industrial devices market include RF
Micro Devices Inc., Renesas Electronics Corporation, Fujitsu Limited, Texas Instruments Inc.,
NXP Semiconductors N.V., International Rectifier, Freescale Semiconductor Inc., International
Quantum Epitaxy plc., GaN Systems Inc., Nichia Corporation, Toshiba Corporation, Efficient
Power Conversion Corporation, and Cree Inc. These players have been profiled in the GaN
industrial devices market based on company and financial overview, business strategies, and
recent developments.
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GaN HEMT market, by Application
•WiMAX/LTE market
•Wireless phone infrastructure: Base stations (BTS) market
•CATV market
•V-SAT market
•Satellite market
•Defense market
•Others
GaN industrial devices market, by Types:
•Power devices
•Schottky diode

3. •Metal oxide semiconductor field effect transistor (MOSFETs)
•High electron mobility transistors (HEMTs)
•Others (rectifiers, other advanced transistor types)
•Opto electronics
•Light-emitting diodes
•Laser diodes
GaN industrial devices market, by Application
•Radio frequency (RF)
•Light-emitting diodes (LED)
•Power device
GaN industrial devices market, by Geography
•North America
•Europe
•Asia Pacific
•Middle East and Africa (MEA)
•Latin America
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