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Programmable Switches
Dr Usha Mehta
usha.mehta@nirmauni.ac.in
Acknowledgement
This presentation has been summarized from
various books, papers, websites and
presentations related to the topic all over the
world. I couldn’t remember where these large
pull of hints and work come from. However,
I’d like to thank all professors and scientists
who created such a good work on this
emerging field. Without those efforts in this
very emerging technology, these notes and
slides can’t be finished.
2
Usha
Mehta
08-12-2023
Programmable Switches
Programmable switches are used in PLD for
• Connections
• Wire
• Logic
• Input-Output
• Configurations
• Logic Blocks
3
Usha
Mehta
08-12-2023
Ideal Programmable Switch
• An FPLD contains thousands of such
programmable switches.
• Hence the switches should
• Occupy very less area
• Have very low ON resistance and very high
OFF resistance
• Have very less parasitic capacitance
• Easily fabricated in large number with high
reliability
4
Usha
Mehta
08-12-2023
• Programmable switches may be
• Permanent
• One time Programmable
• Non Permanent
• Reprogrammable
5
Usha
Mehta
08-12-2023
Fuse
• One Time Programmable (OTP)
• Initially: SHORT,
• After programming: OPEN
6
Usha
Mehta
08-12-2023
Array Logic by Fuse
7
Usha
Mehta
08-12-2023
Fuse Programming
8
Usha
Mehta
08-12-2023
Fuse Programmed Logic Array
9
Usha
Mehta
08-12-2023
Antifuse Technology
• Opposite to Fuse
• Initially: OPEN
• Programmed by forcing a current through it:
SHORT
• Actel calls it “Programmable Low-Impedance
Circuit Element (PLICE)”
10
Usha
Mehta
08-12-2023
Antifuse Structure
• Two metal layers
sandwich a layer of
non-conductive,
amorphous silicon.
When voltage is
applied to this
middle layer, the
amorphous silicon
is turned into
polysilicon, which
is conductive.
11
Usha
Mehta
08-12-2023
MOS Structure of Antifuse
12
Usha
Mehta
08-12-2023
ACTEL’s PLICE Structure
13
Usha
Mehta
08-12-2023
Antifuse: Advantages-Disadvantages
• Advantages
• Very small in size hence allows denser switch
population
• Low series resistance
• Low parasitic capacitance
• Disadvantages
• One time programmable
• Requires extra circuitry to deliver the high
programming voltage
• Requires a specific process ( not same as
normal standard integrated circuit process)
14
Usha
Mehta
08-12-2023
Static RAM Programmable Switch
• Use SRAM Cell to control pass transistor or
multiplexer by the bit-content in the SRAM
cell.
15
Usha
Mehta
08-12-2023
SRAM Cell
16
Usha
Mehta
08-12-2023
• Disadvantages
• Volatile
• External Permanent memory required
• Large Area Required
• Advantages
• Easily and quickly reprogrammable
• Requires only standard integrated circuit
process technology for fabrication. No special
requirements like Antifuse
17
Usha
Mehta
08-12-2023
EPROM Technology
• Use of Erasable Programmable Transistor as
switch
• It is an array of floating-gate transistors
individually programmed by an electronic
device that supplies higher voltages than
those normally used in digital circuits.
18
Usha
Mehta
08-12-2023
EPROM Structure
• A FET with floating gate
• The floating gate has no connections to other parts of
the integrated circuit and is completely insulated by
the surrounding layers of oxide
• Storing data requires applying a higher voltage to the
transistors.
• This creates an avalanche discharge of electrons,
which have enough energy to pass through the
insulating oxide layer and accumulate on the gate
electrode.
• When the high voltage is removed, the electrons are
trapped on the electrode.
• Because of the high insulation value of the silicon
oxide surrounding the gate, the stored charge cannot
readily leak away and the data can be retained for
decades. 19
Usha
Mehta
08-12-2023
EPROM as switch
• Become Open path
when programmed
because of the
electrons trapped
on floating gate
raise the threshold
voltage of n
Channel EPROM
above VDD
• Erasable/Reprogra
mmable by
applying UV light
20
Usha
Mehta
08-12-2023
NOR based Flash Memory
21
Usha
Mehta
08-12-2023
Comparison of Switching Technologies
SRAM Antifuse EPROM EEPROM
Manufacturi
ng Process
Easy Hard Hard Hard
Reprogramm
able?
Yes
(in circuit)
No Yes
(Out of
Circuit)
Yes
(in circuit)
Size Large (12X) Small (1X) Small Small
ON
Resistance
600-800
Ohm
100-500
Ohm
1-4K 1-4K
OFF
capacitance
(fF)
10-50 1-3 10-50 10-50
Power
Consumptio
n
Very less less High High
Volatile? Yes No No No
22
Usha
Mehta
08-12-2023
Switching in FPGA
23
Usha
Mehta
08-12-2023
Market Use of Programmable Switches
• Actel: Antifuse
• Xilinx: SRAM
• Altera: EEPROM/FLASH
24
Usha
Mehta
08-12-2023
Radiation Immunity of Programmable
Switches
Antifuse SRAM FLASH
Configuration has been
designated as hard regarding
SEEs.
Configuration has been
designated as the most
susceptible portion of
circuitry.
Configuration
has been
designated as
hard (but NOT
immune)
regarding SEEs
No need of mitigation Strong need of
mitigation
No need of mitigation
08-12-2023
Usha
Mehta
25
Thank you!
26
Usha
Mehta
08-12-2023

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Programmable Switches for Programmable Logic Devices

  • 1. Programmable Switches Dr Usha Mehta usha.mehta@nirmauni.ac.in
  • 2. Acknowledgement This presentation has been summarized from various books, papers, websites and presentations related to the topic all over the world. I couldn’t remember where these large pull of hints and work come from. However, I’d like to thank all professors and scientists who created such a good work on this emerging field. Without those efforts in this very emerging technology, these notes and slides can’t be finished. 2 Usha Mehta 08-12-2023
  • 3. Programmable Switches Programmable switches are used in PLD for • Connections • Wire • Logic • Input-Output • Configurations • Logic Blocks 3 Usha Mehta 08-12-2023
  • 4. Ideal Programmable Switch • An FPLD contains thousands of such programmable switches. • Hence the switches should • Occupy very less area • Have very low ON resistance and very high OFF resistance • Have very less parasitic capacitance • Easily fabricated in large number with high reliability 4 Usha Mehta 08-12-2023
  • 5. • Programmable switches may be • Permanent • One time Programmable • Non Permanent • Reprogrammable 5 Usha Mehta 08-12-2023
  • 6. Fuse • One Time Programmable (OTP) • Initially: SHORT, • After programming: OPEN 6 Usha Mehta 08-12-2023
  • 7. Array Logic by Fuse 7 Usha Mehta 08-12-2023
  • 9. Fuse Programmed Logic Array 9 Usha Mehta 08-12-2023
  • 10. Antifuse Technology • Opposite to Fuse • Initially: OPEN • Programmed by forcing a current through it: SHORT • Actel calls it “Programmable Low-Impedance Circuit Element (PLICE)” 10 Usha Mehta 08-12-2023
  • 11. Antifuse Structure • Two metal layers sandwich a layer of non-conductive, amorphous silicon. When voltage is applied to this middle layer, the amorphous silicon is turned into polysilicon, which is conductive. 11 Usha Mehta 08-12-2023
  • 12. MOS Structure of Antifuse 12 Usha Mehta 08-12-2023
  • 14. Antifuse: Advantages-Disadvantages • Advantages • Very small in size hence allows denser switch population • Low series resistance • Low parasitic capacitance • Disadvantages • One time programmable • Requires extra circuitry to deliver the high programming voltage • Requires a specific process ( not same as normal standard integrated circuit process) 14 Usha Mehta 08-12-2023
  • 15. Static RAM Programmable Switch • Use SRAM Cell to control pass transistor or multiplexer by the bit-content in the SRAM cell. 15 Usha Mehta 08-12-2023
  • 17. • Disadvantages • Volatile • External Permanent memory required • Large Area Required • Advantages • Easily and quickly reprogrammable • Requires only standard integrated circuit process technology for fabrication. No special requirements like Antifuse 17 Usha Mehta 08-12-2023
  • 18. EPROM Technology • Use of Erasable Programmable Transistor as switch • It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. 18 Usha Mehta 08-12-2023
  • 19. EPROM Structure • A FET with floating gate • The floating gate has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide • Storing data requires applying a higher voltage to the transistors. • This creates an avalanche discharge of electrons, which have enough energy to pass through the insulating oxide layer and accumulate on the gate electrode. • When the high voltage is removed, the electrons are trapped on the electrode. • Because of the high insulation value of the silicon oxide surrounding the gate, the stored charge cannot readily leak away and the data can be retained for decades. 19 Usha Mehta 08-12-2023
  • 20. EPROM as switch • Become Open path when programmed because of the electrons trapped on floating gate raise the threshold voltage of n Channel EPROM above VDD • Erasable/Reprogra mmable by applying UV light 20 Usha Mehta 08-12-2023
  • 21. NOR based Flash Memory 21 Usha Mehta 08-12-2023
  • 22. Comparison of Switching Technologies SRAM Antifuse EPROM EEPROM Manufacturi ng Process Easy Hard Hard Hard Reprogramm able? Yes (in circuit) No Yes (Out of Circuit) Yes (in circuit) Size Large (12X) Small (1X) Small Small ON Resistance 600-800 Ohm 100-500 Ohm 1-4K 1-4K OFF capacitance (fF) 10-50 1-3 10-50 10-50 Power Consumptio n Very less less High High Volatile? Yes No No No 22 Usha Mehta 08-12-2023
  • 24. Market Use of Programmable Switches • Actel: Antifuse • Xilinx: SRAM • Altera: EEPROM/FLASH 24 Usha Mehta 08-12-2023
  • 25. Radiation Immunity of Programmable Switches Antifuse SRAM FLASH Configuration has been designated as hard regarding SEEs. Configuration has been designated as the most susceptible portion of circuitry. Configuration has been designated as hard (but NOT immune) regarding SEEs No need of mitigation Strong need of mitigation No need of mitigation 08-12-2023 Usha Mehta 25